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HN1L03FU
TOSHIBA Field Effect Transistor Silicon N*P Channel MOS Type
HN1L03FU
High Speed Switching Applications Analog Switch Applications
Unit in mm
Q1, Q2 common
Low threshold voltage Q1: Vth = 0.8~2.5V High speed Small package Q2: Vth =-0.5~-1.5V
Q1 Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-Source voltage Gate-Source voltage Drain current Symbol VDS VGSS ID Rating 50 10 50 Unit V V mA
Q2 Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-Source voltage Gate-Source voltage Drain current Symbol VDS VGSS ID Rating -20 -7 -50 Unit V V mA
JEDEC EIAJ TOSHIBA Weight: 6.8mg
2-2J1C
Marking
Absolute Maximum Ratings (Q1, Q2 Common) (Ta = 25C)
Characteristic Drain power dissipation Channel temperature Storage temperature range Symbol PD* Tch Tstg Rating 200 150 -55~150 Unit mW C C
Equivalent Circuit
(Top View)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating
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HN1L03FU
Q1 Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time toff Symbol IGSS Test Condition VGS = 10V, VDS = 0 Min 50 0.8 20 Typ. 20 6.3 1.3 5.7 0.11 0.15 Max 1 1 2.5 50 Unit A V A V mS pF pF pF s s
V (BR) DSS ID = 100A, VGS = 0 IDSS Vth |Yfs| RDS (ON) Ciss Crss Coss ton VDS = 50V, VGS = 0 VDS = 5V, ID = 0.1mA VDS = 5V, ID = 10mA ID = 10mA, VGS = 4.0V VDS = 5V, VGS = 0, f = 1MHz VDS = 5V, VGS = 0, f = 1MHz VDS = 5V, VGS = 0, f = 1MHz VDD = 5V, ID = 10mA, VGS = 0~4.0V VDD = 5V, ID = 10mA, VGS = 0~4.0V
Q2 Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time toff Symbol IGSS Test Condition VGS = -7V, VDS = 0 Min -20 -0.5 15 Typ. 20 10.4 2.8 8.4 0.15 0.13 Max -1 -1 -1.5 40 Unit A V A V mS pF pF pF s s
V (BR) DSS ID = -100A, VGS = 0 IDSS Vth |Yfs| RDS (ON) Ciss Crss Coss ton VDS = -20V, VGS = 0 VDS = -3V, ID = -0.1mA VDS = -3V, ID = -10mA ID = -10mA, VGS = -2.5V VDS = -3V, VGS = 0, f = 1MHz VDS = -3V, VGS = 0, f = 1MHz VDS = -3V, VGS = 0, f = 1MHz VDD = -3V, ID = -10mA, VGS = 0~-2.5V VDD = -3V, ID = -10mA, VGS = 0~-2.5V
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HN1L03FU
Q1 (Nch MOS FET)
Switching Time Test Circuit
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HN1L03FU
Q1 (Nch MOS FET)
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HN1L03FU
Q2 (Pch MOS FET)
Switching Time Test Circuit
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HN1L03FU
Q2 (Pch MOS FET)
(Q1, Q2 common)
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HN1L03FU
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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